Cryogenic 50-nm mHEMT MMIC LNA for 67-116 GHz with 34 K noise temperature

This paper reports the development of a cryogenic wideband low-noise amplifier based on a 50-nm metamorphic high-electron-mobility transistor process on gallium arsenide substrates. The amplifier exhibits an average gain of 22.0 dB and a noise temperature of 49 K at an ambient temperature of 15 K in the frequency range 67-116 GHz. The minimum noise temperature of 34 K is reached at the frequency of 77.5 GHz. Index Terms-cryogenic low-noise amplifier (LNA), metamorphic high-electron-mobility transistor (mHEMT), monolithic microwave integrated circuit (MMIC).