InAs/(GaIn)Sb short period superlattices for IR detection

InAs/(GaIn)Sb short-period superlattices (SL) grown by molecular-beam epitaxy (MBE) show a broken-gap type-II band alignment The effective band gap can be tailored ranging from the far-IR to the mid-IR wavelength. IR photodiodes with cut-off wavelengths in the third atmospheric window (8 - 12 µm) have been fabricated showing quantum efficiencies exceeding 30 %. Detectivities D* at 77 K between 10(exp 11) and 10(exp 12) Jones have been demonstrated, leading to background limited performance (BLIP). At the Fraunhofer IAF, we are realizing staring arrays with high responsivities (> 2 A/W) based on InAs/(GaIn)Sb short-period superlattices. First test-FPA's with 256 x 256 pixels for operation in the 8 to 10 µm range have been processed on fan-out hybrides, showing promising electrical data.