Organic electronic memory based on a ferroelectric polymer

Organic thin film transistors (TFT) are an attractive option for low cost electronic applications and much progress has been made in fabricating prototype circuits for active matrix displays and for RFID applications. To extend the range of applications there is a need to develop and optimise the performance of non-volatile memory devices that are compatible with the solution-processing fabrication procedures used in Plastic Electronics. A possible candidate is an organic TFT incorporating the ferroelectric co-polymer poly(vi nylidenefluoride-trifluoroethylene), P(VDF-TrFE) as the gate insulator.