High energy implantation of high10 B and high11 B into -100- silicon in channel and in random

Profiles of boron implants into the (100) direction of silicon and the range straggling for `B were presented.The electronic stopping power was determined and compared to theoretical data.Both, electronic stopping power data sets of TRIM calculations and of the Monte Carlo code by Hobler are too high especially for energies above 2 MeV.Therefore, range calculations will yield too shallow implantation profiles.The isotopic effect of boron on the range distribution reaches values of 5% for energies around 1 MeV and has, therefore, to be considered if exact profile depths have to be achieved.