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  4. A Homogeneous FeFET-Based Time-Domain Compute-in-Memory Fabric for Matrix-Vector Multiplication and Associative Search
 
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2025
Journal Article
Title

A Homogeneous FeFET-Based Time-Domain Compute-in-Memory Fabric for Matrix-Vector Multiplication and Associative Search

Abstract
Matrix-vector multiplication (MVM) and content-based search are two key operations in many machine learning workloads. This article proposes a ferroelectric FET (FeFET) time-domain compute-in-memory (TD-CiM) array that can accelerate both operations in a homogeneous fabric. We demonstrate that 1) the AND and xor/XNOR logic functions required by MVM and content-based search can be realized using a single compute-in-memory (CiM) cell composed of 2FeFETs connected in series; 2) an inverter chain-based TD-CiM array along with a two-phase time-domain computation principle of the TD-CiM can be employed to implement the MVM and content-based search functions; 3) a signal delay-to-digital output conversion can be implemented by associating a loading capacitor with each stage of the inverter chain-based TD-CiM array, ensuring the full digital compatibility; and 4) the proposed 2FeFET cell and inverter chain-based TD-CiM array are robust against FeFET variation according to our comprehensive theoretical and experimental validation. We show how the FeFET TD-CiM can be exploited to accelerate hyperdimensional computing (HDC) and adjusted to process different tasks through dynamic and fine-grained resource allocation. HDC application benchmarking results show that the proposed FeFET-based TD-CiM offers on average 106x/63x energy reduction/speedup compared to GPU-based implementation. With more than 8500 TOPS/W energy-efficiency, the proposed FeFET-based TD-CiM exhibits huge potential as a processing fabric for various memory-intensive applications.
Author(s)
Yin, Xunzhao
College of Information Science and Electronic Engineering, Zhejiang University
Huang, Qingrong
College of Information Science and Electronic Engineering, Zhejiang University
Errahmouni Barkam, Hamza
Department of Computer Science
Müller, Franz  
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Deng, Shan
Kate Gleason College of Engineering
Vardar, Alptekin
Fraunhofer-Center Nanoelektronische Technologien CNT
De, Sourav
National Tsing Hua University
Jiang, Zhouhang
Kate Gleason College of Engineering
Imani, Mohsen
Department of Computer Science
Schlichtmann, Ulf
Technische Universität München
Hu, Xiaobo Sharon
College of Engineering
Zhuo, Cheng
College of Information Science and Electronic Engineering, Zhejiang University
Kämpfe, Thomas  orcid-logo
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Ni, Kai
College of Engineering
Journal
IEEE Transactions on Computer Aided Design of Integrated Circuits and Systems  
Funder
National Natural Science Foundation of China  
DOI
10.1109/TCAD.2024.3492994
Language
English
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Keyword(s)
  • Content addressable memory

  • ferroelectric FET (FeFET)

  • time-domain compute-in-memory (TD-CiM)

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