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  4. A 67 GHz GaN voltage-controlled oscillator MMIC with high output power
 
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2013
Journal Article
Title

A 67 GHz GaN voltage-controlled oscillator MMIC with high output power

Abstract
This letter describes the design and the realization of a fixed-frequency oscillator and voltage-controlled oscillator (VCO) MMIC realized in an AlGaN/GaN HEMT technology with 100 nm gate length. Both oscillators achieve output power levels of almost 20 dBm without post-amplification. The oscillation frequency of the fixed-frequency oscillator is 65.6 GHz, while the VCO can be tuned from 65.6 to 68.8 GHz, which leads to a relative bandwidth of 5%. The phase noise of the VCO is dBc/Hz at 1 MHz frequency offset.
Author(s)
Weber, Rainer  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Schwantuschke, Dirk  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Brückner, Peter  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Quay, Rüdiger  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mikulla, Michael  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Ambacher, Oliver  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Kallfass, I.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Journal
IEEE microwave and wireless components letters  
DOI
10.1109/LMWC.2013.2265875
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • gallium nitride (GaN)

  • high electron mobility transistor (HEMT)

  • monolithically microwave integrated circuit (MMIC)

  • V-band (50-75 GHz)

  • voltage controlled oscillator (VCO)

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