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Point defects in GaP, GaAs and InP
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1982
Journal Article
Title
Point defects in GaP, GaAs and InP
Author(s)
Schneider, J.
Kaufmann, U.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Journal
Advances in Electronics and Electron Physics
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Keyword(s)
Galliumarsenid
Galliumphosphid
Halbleiter
Indiumphosphid
Punktdefekt
