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2014
Conference Paper
Title
Boron doped a-SiC:H front layers for silicon heterojunction cells
Abstract
The band gap widening and work function modification of boron doped amorphous silicon layers (a- Si:H) by alloying with methane is experimentally evaluated by spectroscopic ellipsometry and measuring the dark band bending by surface photovoltage (SPV) and the external voltage (Voc), respectively.