Positive charge trapping induced by plasma charging damage in NMOS transistors

Plasma Charging Damage (PCD) is well know to create defects in the oxide of MOS Transistors. This damage is commonly associated with the creation of electron traps [1,2]. However, it has been shown that PCD can create hole traps as well [3]. This interpretation has been doubted, because an indirect method to show the existence of hole traps has been used [4]. This study shows a more direct approach and confirms the existence of latent traps capable of capturing positive charge. In addition a qualitative distribution of positive and negative charge inside the oxide can be given.