An 9-GHz silicon-on-insulator CMOS amplifier

A high speed CMOS amplifier operating at 9 GHz is presented in this paper. The amplifier consists of four single cascode stages connected in series. On-chip spiral inductors operating at their resonant frequency serve as load elements of each cascode stage. Good input and output matching was obtained using inductor-capacitor matching networks. The circuit drains 56 mA from 4.2 V supply voltage. The gain is 25 dB at 9.3 GHz with a bandwidth of approx. 180 MHz.