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  4. Design, fabrication, and preliminary test results of a new InGaAsP/InP high-Q ring resonator for gyro applications
 
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2012
Conference Paper
Title

Design, fabrication, and preliminary test results of a new InGaAsP/InP high-Q ring resonator for gyro applications

Abstract
Design, fabrication and initial characterization of large-size InGaAsP/InP ring resonators for gyro applications are reported in this paper. The devices configuration includes a ring with a radius of 13 mm and a straight bus waveguide with tapered ends. Four cavities with the same radius and different values of the bus/ring gap have been fabricated by metal-organic vapour-phase-epitaxy, standard photolithography and reactive ion etching. Characterization results show that the resonator with nominal gap = 1.444 m has a quality factor exceeding 7×105 and resonance depth close to 10 dB.
Author(s)
Dell'Olio, F.
Ciminelli, C.
Armenise, M.N.
Soares, F.M.
Rehbein, W.
Mainwork
24th International Conference on Indium Phosphide and Related Materials, IPRM 2012  
Conference
International Conference on Indium Phosphide and Related Materials (IPRM) 2012  
Compound Semiconductor Week (CSW) 2012  
DOI
10.1109/ICIPRM.2012.6403336
Language
English
Fraunhofer-Institut für Nachrichtentechnik, Heinrich-Hertz-Institut HHI  
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