Monolithically Integrated THz Transceiver for 1550 nm Excitation

We present a monolithically integrated transceiver for terahertz time-domain spectroscopy in reflection geometry. The transceiver is made of MBE grown, Fe doped InGaAs and combines THz emitter and receiver on a single photoconductive chip. With a peak signal-to-noise ratio of 70 dB, a maximum spectral bandwidth of 5 THz and an emitted THz power of 27 µW, the transceiver is a competitive alternative to individual THz emitter and receiver devices. Since the transceiver can be integrated into a fiber-coupled, cylindrical module with a diameter of 25 mm, this device can be used as a compact THz reflection head.