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  4. Micromachined thermoelectric test device based on silicon/germanium superlattices: Simulation, preparation and characterization of thermoelectric behavior
 
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2003
Conference Paper
Title

Micromachined thermoelectric test device based on silicon/germanium superlattices: Simulation, preparation and characterization of thermoelectric behavior

Abstract
Strain-symmetrized superlattice structures based on epitaxially grown Si/Ge multilayers are expected to be promising systems for efficient thermoelectric micro-systems. The paper presents the development of a membrane-type sensor device consisting of Si/Ge superlattice and Si(sub x)Ge(sub 1-x)-alloy legs allowing the study of the thermoelectric behavior at minimized influence of the supporting substrate components. By means of numerical simulation the optimum layout parameters were determined as well as the temperature distribution within the device including the sensitivity to be expected were estimated. Black body radiation measurements of the functional parameters on nearly freestanding thermopile arrays in the sensor regime are presented.
Author(s)
Schumann, J.
Kleint, C.A.
Vinzelberg, H.
Thomas, J.
Hecker, M.
Nurnus, J.
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Böttner, H.
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Lambrecht, A.  
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Künzel, C.
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Völklein, F.
Mainwork
ICT '03, XXII International Conference on Thermoelectrics. Proceedings  
Conference
International Conference on Thermoelectrics (ICT) 2003  
DOI
10.1109/ICT.2003.1287603
Language
English
Fraunhofer-Institut für Physikalische Messtechnik IPM  
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