Stress compensation techniques in thin layers applied to silicon micromachining

Thin films used in silicon technology exhibit internal stress after deposition. If this stress is reduces by a stress compensation method the technological use is substantionally increased. Three systems wre investigated: 1. Silicon nitride and oxide compensated by ion implantation 2. Silicon oxide/nitride sandwich layers 3. Polysilicon, compensated by appropriate deposition temperature, doping and annealing.