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  4. A 245 GHz LNA in SiGe technology
 
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2012
Journal Article
Title

A 245 GHz LNA in SiGe technology

Abstract
A five-stage differential SiGe low noise amplifier (LNA) in cascode topology is presented. Transformer coupling is used between the stages to obtain inter-stage matching. The single ended input and output of the LNA are realized by baluns. The LNA has 18 dB of gain at 245 GHz and a 3 dB bandwidth of 8 GHz. A noise figure of 11 +/- 1 dB NF of the LNA at 245 GHz was measured by the Y-factor method. These values represent the highest gain and the lowest measured noise figure at 245 GHz reported for a SiGe LNA so far. The LNA draws 82 mA at a supply voltage of 3.7 V.
Author(s)
Schmalz, K.
Borngräber, J.
Mao, Y.F.
Rücker, H.
Weber, Rainer  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Journal
IEEE microwave and wireless components letters  
DOI
10.1109/LMWC.2012.2218097
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • low-noise amplifier (LNA)

  • mm-wave circuit

  • SiGe

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