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  4. Ultrafast graded-gap electron transfer optical modulator structure
 
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1994
Journal Article
Title

Ultrafast graded-gap electron transfer optical modulator structure

Abstract
We demonstrate an ultrafast graded-gap electron transfer optical modulator structure with electron escape times on the order of 1 ps. All other aspects important for high-speed applications, for example, electroabsorption and electrical behavior remain essentially unaffected.
Author(s)
Agrawal, N.
Wegener, M.
Journal
Applied Physics Letters  
DOI
10.1063/1.112268
Language
English
Fraunhofer-Institut für Nachrichtentechnik, Heinrich-Hertz-Institut HHI  
Keyword(s)
  • aluminium compounds

  • electro-optical devices

  • electroabsorption

  • gallium arsenide

  • iii-v semiconductors

  • indium compounds

  • optical modulation

  • optical waveguides

  • ultrafast graded-gap electron transfer optical modulator structure

  • electron escape times

  • high-speed applications

  • electrical behavior

  • 1 ps

  • ingaalas-InP

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