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  4. A 4-Watt X-Band compact coplanar high power amplifier MMIC with 18-dB Gain and 25-% PAE
 
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2002
Conference Paper
Title

A 4-Watt X-Band compact coplanar high power amplifier MMIC with 18-dB Gain and 25-% PAE

Other Title
Kompakter koplanarer 4-Watt X-Band Leistungsverstärker MMIC mit 18dB Verstärkerung und 25% PAE
Abstract
The performance of a compact coplanar (CPW) microwave monolithic integrated circuit (MMIC) amplifier with high output power in the X-band is presented. Based on our 0.3-µm gate length GaAs power PHEMT process on 4" wafer, this two-stage amplifier, having a chip size of 16 mm2, averages 4 Watts CW and 25-% PAE in the X-band, with more than 18-dB linear gain. Peak output powers of PB-1dB=36.3 dBm (4.3 Watts) and Psat of 36.9 dBm (4.9 Watt) at 10 GHz with a power added efficiency of 35 % were also measured. Compared to previously reported X-band coplanar HPA, this represents a chip size reduction of 20 %, comparable to the size of compact state-of-the-art microstrip PAs.
Author(s)
Bessemoulin, A.
Massler, Hermann
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Quay, Rüdiger  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Ramberger, S.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Schlechtweg, M.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mainwork
24st Annual GaAs IC Symposium 2002. Technical digest  
Conference
GaAs IC Symposium 2002  
DOI
10.1109/GAAS.2002.1049057
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • high power

  • amplifier

  • Leistungsverstärker

  • HPA

  • PAE

  • x-Band

  • coplanar

  • circuit

  • Koplanarschaltung

  • chip size reduction

  • Chipflächenreduzierung

  • double recess

  • Dopelter Recess

  • PHEMT

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