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1989
Journal Article
Title
Very high purity InP layers grown by adduct-MOVPE
Abstract
Using the adduct compound trimethylindium-trimethylphosphine (TMIn-TMP) very high purity InP layers have been grown by atmospheric pressure MOVPE (AP-MOVPE). Residual electron concentrations of less than 4*1014 cm-3 and mobilities of up to 149000 cm2/V.s at 77 K have been obtained.
Language
English
Keyword(s)
carrier density
carrier mobility
electronic conduction in crystalline semiconductor thin films
iii-v semiconductors
indium compounds
semiconductor epitaxial layers
semiconductor growth
vapour phase epitaxial growth
residual electron concentrations
iii-v semiconductor
adduct-movpe
trimethylindium-trimethylphosphine
atmospheric pressure movpe
mobilities
very high purity InP layers