Options
1990
Conference Paper
Title
Surface passivation of high efficiency silicon solar cells
Abstract
Theroretically and experimentally determined design guides for reducing significantly recombination at the emitter and rear surfaces of full-area AI-BSF and oxide passivated bifacial cells are given. The impact of emitter thickness and surface dopant concentration on emitter saturation current and solar cell efficiency is outlined. A modified emitter structure (locally deep diffused below the metal contacts) is predicted to have superior performance Measured V"oc"-values reveal the potential of deep emitter cells to achieve efficiencies above 20% in spite of high metallisation factors. Emperimentally we find strong dependence of passivation quality on oxide thickness and base doping concentration. The BSF quality of a diffused aluminum layer decreases strongly with increasing drive-in time. For SiO2-passivated rear surfaces of bifacial cells measurements of the dependence of the surface recombination velocity on the excess concentration are presented.
Conference