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1987
Conference Paper
Title
Open stencil masks for ion projection lithography
Abstract
A processing scheme for the manufacturing of an open stencil mask has been set up by application of silicon technology and only one single X-ray lithography step for pattern generation. The mask fabrication is fully adapted to the demands of an ion projection lithography equipment by IMS. It has been proved that this mask technology permits solid structures of a complex geometry with high pattern fidelity. (IMT)