Modeling of grain boundary in laser recrystallization

We have simulated the creation of grain boundaries during argon laser recrystallization of Si film encapsulated between two oxide layers. The simulation takes into account the two dimensional intensity distribution of the laser beam and, therefore the closed melting isotherm as well as the local variation of the temperature gradient at the melting-solid interface of growing silicon crystal. We used this simulation program to investigate the impact of the intensity distribution of the laser beam during the recrystallization on the distribution of the remaining grain boundaries after the recrystallization. (IFT)