Improved delineation technique for two dimensional dopant profiling

A chemical delineation technique suitable for two dimensional dopant profiling has been investigated and improved. The formation of equi-concentration lines in p-doped areas during chemical etching due to drastic changes of the etching rate as function of dopant concentration has been studied. Formation of pn-junction, degeneration of the semiconductor, and formation of recombination centers are discussed as possible cause of these changes. In addition, a new etching procedure for delineation of equi-concentration lines in n-doped regions was successfully.