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2011
Conference Paper
Title
Analytical model for p-n junctions under point source illumination
Abstract
An analytical model of the photoresponse of p-n junctions under a point source illumination is presented. The model measures the response of different regions of the pixel in terms of current. Both p-n+ and p-Nwell junction photodiodes were fabricated in a standard UMC 90nm technology and tested. Model and experimental data reveal a similar behaviour.
Author(s)
Open Access
File(s)
Rights
Use according to copyright law
Language
English
Keyword(s)