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  4. All-active InGaAsP/InP ring cavities for widespread functionalities in the wavelength domain
 
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2002
Conference Paper
Title

All-active InGaAsP/InP ring cavities for widespread functionalities in the wavelength domain

Abstract
All-active ring resonator structures allow filter operation as well as laser mode operation, only depending on the driving conditions. Add/drop filter devices based on active InGaAsP/InP have been realized for the 100 and 50 GHz free spectral range. The properties of all pass-filter elements built of active single ring resonators are investigated. A delay time up to 80 ps has been measured for a bending radius R of 250 mu m and a coupling ratio of 0.6 to the bus-waveguide. The respective dispersion of +or-280 ps/nm is attained within a pass band of 5 GHz. Operating in the laser mode, microring resonator structures with R = 50 mu m show a single mode emission spectrum with an optical power output as high as of 6.5 mW per facet.
Author(s)
Troppenz, U.
Hamacher, M.
Rabus, D.G.
Heidrich, H.
Mainwork
IPRM, 14th Indium Phosphide and Related Materials Conference. Conference proceedings  
Conference
International Conference on Indium Phosphide and Related Materials (IPRM) 2002  
DOI
10.1109/ICIPRM.2002.1014471
Language
English
Fraunhofer-Institut für Nachrichtentechnik, Heinrich-Hertz-Institut HHI  
Keyword(s)
  • gallium arsenide

  • gallium compounds

  • iii-v semiconductors

  • indium compounds

  • laser cavity resonators

  • optical communication equipment

  • optical delay lines

  • optical filters

  • optical resonators

  • ring lasers

  • semiconductor lasers

  • all-active ring resonator structures

  • filter operation

  • laser mode operation

  • driving conditions

  • add/drop filter devices

  • InGaAsP/InP ring cavities

  • all pass-filter elements

  • adjustable wavelength filters

  • microring resonator structures

  • single mode emission spectrum

  • 100 GHz

  • 50 GHz

  • 80 ps

  • 5 GHz

  • 6.5 mw

  • 250 micron

  • 50 micron

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