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2002
Conference Paper
Title
All-active InGaAsP/InP ring cavities for widespread functionalities in the wavelength domain
Abstract
All-active ring resonator structures allow filter operation as well as laser mode operation, only depending on the driving conditions. Add/drop filter devices based on active InGaAsP/InP have been realized for the 100 and 50 GHz free spectral range. The properties of all pass-filter elements built of active single ring resonators are investigated. A delay time up to 80 ps has been measured for a bending radius R of 250 mu m and a coupling ratio of 0.6 to the bus-waveguide. The respective dispersion of +or-280 ps/nm is attained within a pass band of 5 GHz. Operating in the laser mode, microring resonator structures with R = 50 mu m show a single mode emission spectrum with an optical power output as high as of 6.5 mW per facet.
Keyword(s)
gallium arsenide
gallium compounds
iii-v semiconductors
indium compounds
laser cavity resonators
optical communication equipment
optical delay lines
optical filters
optical resonators
ring lasers
semiconductor lasers
all-active ring resonator structures
filter operation
laser mode operation
driving conditions
add/drop filter devices
InGaAsP/InP ring cavities
all pass-filter elements
adjustable wavelength filters
microring resonator structures
single mode emission spectrum
100 GHz
50 GHz
80 ps
5 GHz
6.5 mw
250 micron
50 micron