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A study of the interface states in MIS-structures with thin SiO2 and SiOxNy layers using deep level transient spectroscopy
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1999
Journal Article
Title
A study of the interface states in MIS-structures with thin SiO2 and SiOxNy layers using deep level transient spectroscopy
Author(s)
Beyer, R.
Burghardt, H.
Thomas, E.
Reich, R.
Zahn, D.R.T.
Gessner, T.
Journal
Microelectronics reliability
DOI
10.1016/S0026-2714(98)00235-2
Language
English
Fraunhofer-Institut für Zuverlässigkeit und Mikrointegration IZM