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  4. Uncooled high-temperature (130 deg C) operation of InGaAs-GaAs multiple quantum-well lasers at 20 Gb/s
 
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1997
Journal Article
Title

Uncooled high-temperature (130 deg C) operation of InGaAs-GaAs multiple quantum-well lasers at 20 Gb/s

Other Title
Ungekühlter Hochtemperaturbetrieb (130 Grad C) von InGaAs-GaAs MQW Lasern bei 20 Gb/s
Abstract
Short-haul fiber-optic communication systems require high-speed semiconductor lasers that can operate uncooled over a wide temperature range. In this letter, we describe high-speed short-cavity InGaAs-GaAs multiple-quantum-well lasers operating at 1.1-mu m wavelength. The Fabry-Perot lasers were fabricated in a triple-mesa geometry suitable for on-wafer probing. With 3 x 200 mu m(exp 2) ridge-waveguide lasers, which showed the best compromise between high-temperature and high-speed performance, a 3-dB modulation bandwidth of 14.5 GHz at 130 deg C was achieved. Uncooled 20-Gb/s operation of these lasers is presented over a wide-temperature range from 25 deg C to 130 deg C without automatic power control.
Author(s)
Czotscher, K.
Larkins, E.C.
Weisser, S.
Benz, W.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Daleiden, J.
Fleissner, J.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Maier, M.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Ralston, J.D.
Rosenzweig, Josef  
Journal
IEEE Photonics Technology Letters  
DOI
10.1109/68.588108
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • digital modulation

  • Halbleiterlaser

  • high-speed devices

  • Hochgeschwindigkeits-Bauelemente

  • quantum-well laser

  • semiconductor laser

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