• English
  • Deutsch
  • Log In
    Password Login
    Research Outputs
    Fundings & Projects
    Researchers
    Institutes
    Statistics
Repository logo
Fraunhofer-Gesellschaft
  1. Home
  2. Fraunhofer-Gesellschaft
  3. Konferenzschrift
  4. Room temperature bonding of nanostructured silicon wafers and mechanical characterization
 
  • Details
  • Full
Options
2006
Conference Paper
Title

Room temperature bonding of nanostructured silicon wafers and mechanical characterization

Abstract
A new method for bonding of two silicon wafers at room temperature is presented. The technique is based on the interlocking of needle-like structured surfaces. The required nano structure (black silicon) is fabricated using a reactive ion etch process with gas chopping. The needles on the surface have a length of 15-25 µm and a diameter of 300-500 nm with a pitch in the range of their diameters. An external pressure is applied to bond the two aligned wafers at room temperature. The retention force can reach up to 3.8 MPa. Interfacial energy values larger than 2 J/m2 were measured.
Author(s)
Stubenrauch, M.
Fischer, M.
Bernasch, M.
Bagdahn, J.
Mainwork
2nd International Workshop on Wafer Bonding for MEMS Technologies 2006  
Conference
International Workshop on Wafer Bonding for MEMS Technologies 2006  
Language
English
Fraunhofer-Institut für Werkstoffmechanik IWM  
Keyword(s)
  • wafer bonding

  • black silicon

  • strength

  • Cookie settings
  • Imprint
  • Privacy policy
  • Api
  • Contact
© 2024