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  4. The lattice sites of carbon in highly doped AlAs:C grown by molecular beam epitaxy.
 
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1993
Journal Article
Title

The lattice sites of carbon in highly doped AlAs:C grown by molecular beam epitaxy.

Other Title
Gitterplätze von Kohlenstoff in hoch dotiertem AlAs:C, hergestellt mittels Molekularstrahl-Epitaxie
Abstract
Infrared absorption measurements of heavily carbon-doped AlAs have revealed a localized vibrational mode at 630 cmhigh-1 which appears as a Fano profile. Raman scattering measurements show a corresponding line at 634 cmhigh-1: possible reasons for the difference in frequency are discussed. The line is assigned to CsubAs acceptors and a comparison is made with a two-parameter Keating cluster model. Additional weaker lines at 615 cmhigh-1, 633 cmhigh-1 and 645 cmhigh-1 have been observed in absorption, and possible interpretations have been considered.
Author(s)
Davidson, B.R.
Newman, R.C.
Robbie, D.A.
Sangster, M.J.L.
Fischer, A.
Ploog, K.
Wagner, J.
Journal
Semiconductor Science and Technology  
DOI
10.1088/0268-1242/8/4/022
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • AlAs

  • carbon doping

  • Kohlenstoffdotierung

  • localized vibrational mode

  • lokaler Schwingungsmodus

  • raman spectroscopy

  • Ramanspektroskopie

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