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  4. Investigation of thin oxide films on titanium for capacitor applications
 
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2008
Conference Paper
Title

Investigation of thin oxide films on titanium for capacitor applications

Abstract
Thin passive films on titanium formed by electrolytic oxidation show a high relative permittivity and could be a promising cost effective dielectric material for capacitor applications. In the present work, the films were formed in an acetate buffer solution by potentiodynamic polarisation up to various potentials. The film thickness was determined by coulometry and ellipsometry. The growth factor is 2.7 nm/V. Furthermore, by using an electrochemical micro-capillary cell the anodising process was performed at high lateral resolution on different substrate grains with various crystallographic orientations. An influence of the Ti grain orientation on the TiO2 film thickness could not be observed under the used experimental conditions. By means of transmission electron microscope(TEM) investigation the oxide film structure could be determined as prevailing amorphous. Entnommen aus <a_href="http://www.fiz-technik.de/db/b_tema.htm" target="_blank">TEMA</a>
Author(s)
Schroth, S.
Schneider, M.
Mayer-Uhma, T.
Michaelis, A.
Klemm, V.
Mainwork
Papers Presented at ECASIA'07, the 12th European Conference on Applications of Surface and Interface Analysis. Special Issue  
Conference
European Conference on Applications of Surface and Interface Analysis (ECASIA) 2007  
DOI
10.1002/sia.2708
Language
English
Fraunhofer-Institut für Keramische Technologien und Systeme IKTS  
Keyword(s)
  • titanium

  • thin oxide film

  • cyclovoltammogram

  • coulometry

  • thickness estimation

  • Passivierung

  • Titan

  • anodische Oxidation

  • Dielektrizitätskonstante

  • Acetat

  • Pufferlösung

  • Schichtdickenmessung

  • Coulometrie

  • Ellipsometrie

  • elektrochemisches Potenzial

  • Voltammetrie

  • Kristallorientierung

  • amorphe dünne Schicht

  • Transmissionselektronenmikroskopie (TEM)

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