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1991
Conference Paper
Title
Electro-optic modulation by electron transfer in MOVPE grown InGaAsP/InP multiple quantum well structures
Abstract
The authors demonstrate for the first time electro-optic modulation due to voltage controlled phase space filling by electron transfer in modulation doped MOVPE grown InGaAsP/InP multiple quantum well structures.
Language
English
Keyword(s)
electro-optical devices
gallium arsenide
gallium compound
iii-v semiconductor
indium compounds
integrated optic
optical modulation
semiconductor growth
semiconductor quantum wells
vapour phase epitaxial growth
mqw semiconductor
sq well
optical switch
electron transfer
movpe grown
multiple quantum well structure
electro-optic modulation
voltage controlled phase space filling
modulation doped
InGaAsP-InP