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  4. Electro-optic modulation by electron transfer in MOVPE grown InGaAsP/InP multiple quantum well structures
 
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1991
Conference Paper
Title

Electro-optic modulation by electron transfer in MOVPE grown InGaAsP/InP multiple quantum well structures

Abstract
The authors demonstrate for the first time electro-optic modulation due to voltage controlled phase space filling by electron transfer in modulation doped MOVPE grown InGaAsP/InP multiple quantum well structures.
Author(s)
Agrawal, N.
Hoffmann, D.
Franke, D.
Li, K.C.
Clemens, U.
Witt, A.
Wegener, M.
Mainwork
IOOC-ECOC '91. 17th European Conference on Optical Communication ECOC '91. 8th International Conference on Integrated Optics and Optical Fibre Communication IOOC '91. Vol.3  
Conference
European Conference on Optical Communication (ECOC) 1991  
International Conference on Integrated Optics and Optical Fibre Communication (IOOC) 1991  
Language
English
Fraunhofer-Institut für Nachrichtentechnik, Heinrich-Hertz-Institut HHI  
Keyword(s)
  • electro-optical devices

  • gallium arsenide

  • gallium compound

  • iii-v semiconductor

  • indium compounds

  • integrated optic

  • optical modulation

  • semiconductor growth

  • semiconductor quantum wells

  • vapour phase epitaxial growth

  • mqw semiconductor

  • sq well

  • optical switch

  • electron transfer

  • movpe grown

  • multiple quantum well structure

  • electro-optic modulation

  • voltage controlled phase space filling

  • modulation doped

  • InGaAsP-InP

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