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High-temperature modeling of AlGaN/GaN HEMTs
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2009
Conference Paper
Title
High-temperature modeling of AlGaN/GaN HEMTs
Author(s)
Vitanov, S.
Palankovski, V.
Maroldt, S.
Quay, Rüdiger
Mainwork
International Semiconductor Device Research Symposium, ISDRS 2009
Conference
International Semiconductor Device Research Symposium (ISDRS) 2009
DOI
10.1109/ISDRS.2009.5378300
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
