Galvanische Aluminium-Abscheidung auf unterschiedlichen Startschichten für die Leiterplatten- und Mikrosystemtechnik (Teil 3)
Galvanic aluminum deposition on different seed layers for the printed circuit board and microsystem technologies (Part 3)
The production of thick AI layers at moderate temperatures is of great interest for many applications. In this paper the galvanic deposition ofaluminium for printed circuit board and microsystem technology is investigated. Influencing variables on the layer morphology are represented by deposition on silicon substrates with a gold seed layer. The current density and the electrolyte temperature have a great influence on the microstructure of the layers produced. The deposition parameters evaluated for the gold seed layer cannot be transferred to an aluminium seed layer. Vias are very important for a functional printed circuit board. In this article different approaches for the coating of such through-hole contacts are presented. Furthermore, the structuring of the aluminium layers is described using photoresist including etching of the seed layer.