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  4. Effect of index-antiguiding on the threshold of GaN-based narrow ridge-waveguide laser diodes
 
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2013
Conference Paper
Titel

Effect of index-antiguiding on the threshold of GaN-based narrow ridge-waveguide laser diodes

Abstract
The effect of index antiguiding on GaN-based blue and violet laser diodes has been investigated. Strong antiguiding effects are proposed to be responsible for the large dependence of the threshold current density on the ridge etch depth.
Author(s)
Redaelli, L.
Wenzel, H.
Weig, T.
Lükens, G.
Einfeldt, S.
Schwarz, U.T.
Kneissl, M.
Tränkle, G.
Hauptwerk
CLEO: Science and Innovations
Konferenz
Quantum Electronics and Laser Science - Fundamental Science Conference (QELS) 2013
Thumbnail Image
DOI
10.1364/CLEO_SI.2013.CF1F.3
Language
English
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Fraunhofer-Institut für Angewandte Festkörperphysik IAF
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