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  4. Atomistic analysis of the vacancy diffusion mechanism
 
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1997
Conference Paper
Title

Atomistic analysis of the vacancy diffusion mechanism

Other Title
Atomistische Analyse des Leerstellen-Diffusionsmechanismus
Author(s)
List, S.
Ryssel, H.
Mainwork
International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96  
Conference
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 1996  
Language
English
IIS-B  
Keyword(s)
  • atomistic model

  • atomistisches Modell

  • diffusion mechanism

  • Diffusionsmechanismus

  • Halbleitertechnologie

  • semiconductor technology

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