• English
  • Deutsch
  • Log In
    Password Login
    or
  • Research Outputs
  • Projects
  • Researchers
  • Institutes
  • Statistics
Repository logo
Fraunhofer-Gesellschaft
  1. Home
  2. Fraunhofer-Gesellschaft
  3. Konferenzschrift
  4. Electrical characterization of low dose focused ion beam induced damage in silicon by scanning spreading resistance microscopy
 
  • Details
  • Full
Options
2007
Poster
Titel

Electrical characterization of low dose focused ion beam induced damage in silicon by scanning spreading resistance microscopy

Titel Supplements
Poster at ICN+T 2007, International Conference on Nano Science and Technology 2007, Stockholm, Sweden
Author(s)
Beuer, S.
Yanev, V.
Rommel, M.
Bauer, A.J.
Ryssel, H.
Konferenz
International Conference on Nano Science and Technology (ICN+T) 2007
DOI
10.24406/publica-fhg-356847
File(s)
001.pdf (1.23 MB)
Language
English
google-scholar
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB
Tags
  • FIB induced damage

  • SSRM

  • Cookie settings
  • Imprint
  • Privacy policy
  • Api
  • Send Feedback
© 2022