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  4. PDL optimization in waveguide MQW pin photodiodes
 
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2014
Conference Paper
Titel

PDL optimization in waveguide MQW pin photodiodes

Abstract
In this paper, a simulation model is presented for optimizing the polarization dependent loss (PDL) of waveguide multiple-quantum well (MQW) pin photodiodes (PD). The model accounts for strain, carrier transit time through the MQW layers and free carrier density in the quantum wells.
Author(s)
Zhou, G.
Runge, P.
Hauptwerk
14th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2014
Konferenz
International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) 2014
Thumbnail Image
DOI
10.1109/NUSOD.2014.6935416
Language
English
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Fraunhofer-Institut für Nachrichtentechnik, Heinrich-Hertz-Institut HHI
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