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  4. Assessment of semi-insulating InP:Fe layers for substrate applications
 
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1989
Conference Paper
Titel

Assessment of semi-insulating InP:Fe layers for substrate applications

Abstract
Semi-insulating InP epi-substrates formed by epitaxial InP:Fe layers on suitable base substrates are proposed and investigated. Compared to standard commercial s.i. bulk substrates, such epi-substrates offer lower defect densities, well-controllable Fe-levels and considerably higher specific resistivities.
Author(s)
Grote, N.
Bach, H.G.
Feifel, T.
Franke, D.
Harde, P.
Sartorious, B.
Wolfram, P.
Hauptwerk
ESSDERC '89. 19th European Solid State Device Research Conference. Proceedings
Konferenz
European Solid State Device Research Conference 1989
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English
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Fraunhofer-Institut für Nachrichtentechnik, Heinrich-Hertz-Institut HHI
Tags
  • electronic conduction in crystalline semiconductor thin films

  • iii-v semiconductors

  • indium compounds

  • iron

  • semiconductor epitaxial layers

  • substrates

  • iii-v semiconductor

  • epitaxial layers

  • controllable dopant level

  • substrate applications

  • epi-substrates

  • defect densities

  • specific resistivities

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