A <5 dB NF, >17 dBm OP₁ (dB) F-Band GaN-on-SiC HEMT LNA with a Monolithic Substrate-Integrated Waveguide Filter

This paper demonstrates the monolithic integration of a substrate-integrated waveguide bandpass filter (BPF) and a low-noise amplifier (LNA) at F-band, fabricated in a 70-nm GaN-on-SiC technology. The three-stage LNA alone achieves a state-of-the-art average noise figure of 3.6 dB over 87-115 GHz. The LNA + BPF exhibits a peak gain of 13.6 dB over a 3 dB bandwidth of 17 GHz from 104 to 121 GHz. The average noise figure is 4.9 dB over 87-115 GHz. The OP 1dB and saturated output power are 17.6 dBm and >20 dBm, respectively.