2010
Conference Paper
Title

Inhibition of enhanced Cu oxidation on ruthenium

Abstract
The enhanced oxidation of Cu on Ru/diffusion barriers was observed. The in-situ X-ray diffraction results reveal that the Cu oxidation can be inhibited by doping C in either Ru adhesion layer or TaN barrier layer. The RuC/barrier becomes more robust with certain amount of C doped in Ru. ALD Cu2O on the RuC substrate was carried out and the effect of C on reduction of Cu oxide was observed.
Author(s)
Ding, S.-F.
Xie, Q.
Waechtler, T.
Lu, H.-S.
Schulz, Stefan E.  
Qu, X.-P.
Mainwork
Conference
DOI
Language
English