Laser-induced formation of SiO2 layers for microelectronics
Abstract
After a short overview about the different techniques of the SiO2-formation by photo-induced methods used in microelectronics, the laser-induced deposition of SiO2-layers on silicon wafers from TEOS by ArF excimer laser are depicted in more detail and the deposition conditions are outlined in dependence of substrate temperature, partial pressure and laser fluences. The physical properties of the SiO2-layers were investigated by FT-IR spectroscopy and ellipsometry; the electrical properties of CV-characteristic, mobile ion density, interface state density and breakdown voltage are given.
