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  4. Identification of As-vacancy complexes in Zn-diffused GaAs
 
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2013
Journal Article
Title

Identification of As-vacancy complexes in Zn-diffused GaAs

Abstract
We have used positron annihilation spectroscopy to study the introduction of point defects in Zn-diffused semi-insulating GaAs. The diffusion was performed by annealing the samples for 2 h at 950 degrees C. The samples were etched in steps of 7 mu m. Both Doppler broadening using slow positron beam and lifetime spectroscopy studies were performed after each etching step. Both techniques showed the existence of vacancy-type defects in a layer of about 45 mu m. Secondary ion mass spectroscopy measurements illustrated the presence of Zn at high level in the sample almost up to the same depth. Vacancy-like defects as well as shallow positron traps were observed by lifetime measurements. We distinguish two kinds of defects: As vacancy belongs to defect complex, bound to most likely one Zn atom incorporated on Ga sublattice, and negative-ion-type positron traps. Zn acceptors explained the observation of shallow traps. The effect of Zn was evidenced by probing GaAs samples annealed under similar conditions but without Zn treatment. A defect-free bulk lifetime value is detected in this sample. Moreover, our positron annihilation spectroscopy measurements demonstrate that Zn diffusion in GaAs system is governed by kick-out mechanism.
Author(s)
Elsayed, M.
Krause-Rehberg, R.
Korff, B.
Richter, S.
Leipner, H.S.
Journal
Journal of applied physics  
DOI
10.1063/1.4793791
Language
English
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