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  4. GaAs electronics and optoelectronics at FhGIAF.
 
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1992
Journal Article
Title

GaAs electronics and optoelectronics at FhGIAF.

Other Title
GaAs Elektronik und Optoelektronik am IAF
Abstract
The Fraunhofer Institute for Applied Solid State Physics (IAF) in Freiburg, Germany, has built up a world-class reputation for its R and D of integrated microelectronics and optoelectronic circuits based on the GaAs/AlGaAs/InGaAs material system.
Author(s)
Diehl, R.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Journal
III-Vs Review  
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • 10 Gbit/s bit-synchronizer

  • GaAs electronic

  • GaAs-Elektronik

  • optoelectronics

  • Optoelektronik

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