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  4. External-field-induced electric dipole moment of biexcitons in a semiconductor
 
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1995
Journal Article
Titel

External-field-induced electric dipole moment of biexcitons in a semiconductor

Alternative
Elektrisches Dipolmoment von Biexzitonen induziert durch ein externes Feld
Abstract
We report on the observation of an electric-field-induced electric dipole moment of biexcitonic molecules in a GaAs/Al0.3Ga0.7As superlattice. The macroscopic oscillating electric field, associated with the microscopic vibronic wave-packet dipole moments, is monitored by time-resolved transmittive electro-optic sampling. The field dependence of the biexcitonic binding energy is detected by transient four-wave mixing. From this experiment, an ultrafast nonresonant excitation mechanism of biexcitons is inferred.
Author(s)
Leisching, P.
Ott, R.
Haring Bolivar, P.
Dekorsy, T.
Bakker, H.J.
Roskos, H.G.
Kurz, H.
Köhler, K.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Zeitschrift
Physical Review. B
Thumbnail Image
DOI
10.1103/PhysRevB.52.R16993
Language
English
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Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Tags
  • aluminium compounds

  • biexcitons

  • binding energy

  • electro-optical effects

  • gallium arsenide

  • III-V semiconductors

  • multiwave mixing

  • quantum wells

  • time resolved measurement

  • zeitaufgelöste elektrische Messung

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