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  4. Investigation of phonons in HgCdTe using Raman scattering and far-infrared reflectivity.
 
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1990
Journal Article
Titel

Investigation of phonons in HgCdTe using Raman scattering and far-infrared reflectivity.

Alternative
Untersuchung der Phononen in HgCdTe mittels Raman-Streuung und Reflexion im fernen Infrarot
Abstract
We have measured and analysed the Raman-scattering and far-infrared spectra from unoriented n- and p-type Hg sub 1-x Cd sub x Te with x equal 0.21. Measurements were made in the 80-180 cm high -1 frequency region at temperatures of 10 and 80 K. Comparison of the n- and p-type spectra leads to the conclusion that the electronic contribution to the Raman spectra is small. In particular, the data show that the 135 cm high -1 feature originates in lattice effects and may be related to the Te-3Hg-Cd combination as previously suggested. The weak but distinct fine structure present in the CdTe-like reststrahlen band at about 153 cm high -1 is tentatively assigned to be a result of localised oscillations of Cd ions in the alloy lattice. A study of the spectral changes between 10 and 80 K clearly indicates a softening of the HgTe-like TO phonon.
Author(s)
Amirtharaj, P.M.
Dhar, N.K.
Baars, J.
Seelewind, H.
Zeitschrift
Semiconductor Science and Technology
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DOI
10.1088/0268-1242/5/3S/015
Language
English
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Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Tags
  • HgTe-CdTe alloy modes

  • HgTe-CdTe-Legierungsmoden

  • optical reflectivity

  • optisches Reflexionsvermögen

  • Phononen

  • phonons

  • raman scattering

  • Ramanstreuung

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