In situ reaction mechanism studies on ozone-based atomic layer deposition of Al2O3 and HfO2

The mechanisms OF technologically important atomic layer deposition (ALD) processes, trimethylaluminium (TMA)/ozone and tetrakis(ethylmethylamino)hafnium (TEMAH)/ozone, for the growth of Al2O3 and HfO2 thin films are studied in situ by a quadrupole mass spectrometer coupled with a 300 mm ALD reactor. In addition to released CH4 and CO2, water was detected as one of the reaction byproduct in the TMA/O-3 process. In the TEMAH/O-3 process, the surface after the ozone pulse consisted of chemisorpted active oxygen and -OH groups, leading to the release of H2O, CO2, and HNEtMe during the metal precursor pulse.