Stark kolliminierte Ausgangsstrahlung von gittergekoppelten PbSnSe/PbEuSnSe Diodenlasern
Abstract
Grating coupled emission PbSnSe/PbEuSnSe double-heterostructure stripe-geometry diode lasers were fabricated using molecular beam epitaxy. Low-divergence far-field patterns of some 5 degrees for multimode operation and some 2 degrees for single-mode operation were obtained. These are the lowest values ever achieved with Pb salt lasers. (IPM)
