RF-noise model extraction procedure for distributed multiport models

A parameter extraction procedure for noise models in distributed multiport topology is presented. This model topology is able to describe the small-signal behavior of high electron mobility transistors (HEMTs) even in the sub millimeter-wave regime while providing full model-scalability. The method introduces an efficient way to extract both the active, intrinsic transistor parameters and the noise properties for distributed multiport models. A fully scalable small-signal and noise-model of a 50nm metamorphic HEMT technology in the distributed multiport approach is presented.