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  4. Channeling of Si during implantation into GaAs for MESFETs
 
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1988
Conference Paper
Title

Channeling of Si during implantation into GaAs for MESFETs

Other Title
Channeling von Si bei der Implantation in GaAs für die Herstellung von MESFETs
Author(s)
Maier, M.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Bachem, K.H.
Hornung, J.
Mainwork
Secondary Ion Mass Spectrometry. SIMS VI  
Conference
International Conference on Secondary Ion Mass Spectrometry 1987  
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • GaAs

  • implantation

  • Ionen Channeling

  • SIMS

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