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Channeling of Si during implantation into GaAs for MESFETs
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1988
Conference Paper
Title
Channeling of Si during implantation into GaAs for MESFETs
Other Title
Channeling von Si bei der Implantation in GaAs für die Herstellung von MESFETs
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Author(s)
Maier, M.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Bachem, K.H.
Hornung, J.
Mainwork
Secondary Ion Mass Spectrometry. SIMS VI
Conference
International Conference on Secondary Ion Mass Spectrometry 1987
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Keyword(s)
GaAs
implantation
Ionen Channeling
SIMS