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  4. Fabrication of local areas of high aspect ratio silicon structures using metal-assisted chemical etching
 
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2023
Conference Paper
Title

Fabrication of local areas of high aspect ratio silicon structures using metal-assisted chemical etching

Abstract
Within this work, we present the successful integration of the metal assisted chemical etching into a wafer fabrication regime. We created local areas, which contains 3D silicon structures with a high aspect ratio by a bottom-up approach. The catalytic wet etching process involved gold nano-particles with a median diameter of 7.8 nm to etch silicon at the metal silicon interface solely. This resulted in 0.9 μm long vertical silicon rods. This gives a platform for a low-cost fabrication of devices with integrated 3D structures.
Author(s)
Franz, Mathias
Fraunhofer-Institut für Elektronische Nanosysteme ENAS  
Junghans, Romy
Fraunhofer-Institut für Elektronische Nanosysteme ENAS  
Schulz, Stefan E.
Mainwork
IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM) 2023. Proceedings  
Conference
International Interconnect Technology Conference 2023  
Materials for Advanced Metallization Conference 2023  
DOI
10.1109/IITC/MAM57687.2023.10154648
Language
English
Fraunhofer-Institut für Elektronische Nanosysteme ENAS  
Keyword(s)
  • black silicon

  • catalytic etching

  • MACE

  • nanowires

  • wafer-level integration

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