Tailoring the absorption properties of Black Silicon

Samples of crystalline silicon for use as solar cell material are structured and hyperdoped with sulfur by irradiation with femtosecond laser pulses under a sulfur hexafluoride atmosphere. The sulfur creates energy levels in the silicon band gap, allowing light absorption in the infrared wavelength regime, which offers the potential of a significant efficiency increase. This Black Silicon is a potential candidate for impurity or intermediate band photovoltaics. In this paper we determine the laser processed sulfur energy levels by deep-level transient spectroscopy (DLTS). We present how the number of laser pulses per sample spot influence the sulfur energy levels and hence the DLTS spectra. Further we show that changing the laser pulse by splitting it with a Michelson interferometer setup results in altered absorption which is most likely due to altered sulfur energy levels. This contribution focuses on the possibility of controlling the sulfur in Black Silicon through manipulating the laser pulse shape. As a first step samples of microstructured silicon are fabricated with doubled laser pulses at two different laser pulse distances and the absorption spectra by integrating sphere measurements are compared.